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Koptyug Ave. Its basic optical and optoelectronic properties are known to be improved via phase transition from amorphous to polycrystalline phase. All these methods are usually accompanied by a melting-cooling-solidification cycle. In particular, the use of excimer laser with ultraviolet UV radiation was previously justified to efficiently drive transition of amorphous Si to its polycrystalline phase allowing to produce high-quality films [ 12 , 13 , 14 , 15 ]. Visible laser radiation in particular, blue and green lasers operating in CW and pulsed mode [ 1 , 16 , 17 , 18 , 19 , 20 ] was shown to increase the maximal processing thickness to — nm; however, this is still not enough to cover all applications.
These metrics are regularly updated to reflect usage leading up to the last few days. Citations are the number of other articles citing this article, calculated by Crossref and updated daily. Find more information about Crossref citation counts. The Altmetric Attention Score is a quantitative measure of the attention that a research article has received online. Clicking on the donut icon will load a page at altmetric. Find more information on the Altmetric Attention Score and how the score is calculated. The laser crystallization LC of amorphous silicon thin films into polycrystalline silicon pc-Si thin films on glass substrates is an active field of research in the fabrication of Si-based thin film transistors and thin film solar cells.
We review the field of thin-film silicon solar cells with an active layer thickness of a few micrometers. These technologies can potentially lead to low cost through lower material costs than conventional modules, but do not suffer from some critical drawbacks of other thin-film technologies, such as limited supply of basic materials or toxicity of the components. Amorphous Si technology is the oldest and best established thin-film silicon technology. Amorphous silicon is deposited at low temperature with plasma-enhanced chemical vapor deposition PECVD. In spite of the fundamental limitation of this material due to its disorder and metastability, the technology is now gaining industrial momentum thanks to the entry of equipment manufacturers with experience with large-area PECVD. Microcrystalline Si also called nanocrystalline Si is a material with crystallites in the nanometer range in an amorphous matrix, and which contains less defects than amorphous silicon. Its lower bandgap makes it particularly appropriate as active material for the bottom cell in tandem and triple junction devices.
Crystalline silicon c-Si is the crystalline forms of silicon , either polycrystalline silicon poly-Si, consisting of small crystals , or monocrystalline silicon mono-Si, a continuous crystal. Crystalline silicon is the dominant semiconducting material used in photovoltaic technology for the production of solar cells. These cells are assembled into solar panels as part of a photovoltaic system to generate solar power from sunlight. In electronics, crystalline silicon is typically the monocrystalline form of silicon, and is used for producing microchips. This silicon contains much lower impurity levels than those required for solar cells. Production of semiconductor grade silicon involves a chemical purification to produce hyperpure polysilicon followed by a recrystallization process to grow monocrystalline silicon.
Hydrogenated amorphous and microcrystalline silicon deposition has been a subject of research over the last four decades, supported by its increasing number of applications. Many deposition techniques involving physical sputtering or chemical plasma enhanced chemical vapour deposition processes have been studied. The choice of the deposition technique may help to favour some type of film precursor, in particular SiH 3 which is often considered as the most suitable to obtain device grade material. In particular, thanks to in-situ ellipsometry measurements, we demonstrate that there is a growth zone close to the film surface, where cross-linking reactions leading to bulk-like formation take place. In fact, the crystallization front may be located a few tens of nanometers below the surface exposed to the plasma, thus suggesting that the film properties are governed neither by the film precursor, nor by the deposition technique.
Silicon heterojunction solar cell and crystallization of amorphous silicon An alternative is the heterojunction cells, such as amorphous silicon/crystalline silicon heterojunction (SHJ) solar cell, where the emitter Request Full-text Paper PDF.
Hydrogenated amorphous and microcrystalline silicon deposition has been a subject of research over the last four decades, supported by its increasing number of applications. Many deposition techniques involving physical sputtering or chemical plasma enhanced chemical vapour deposition processes have been studied. The choice of the deposition technique may help to favour some type of film precursor, in particular SiH 3 which is often considered as the most suitable to obtain device grade material.
Nature Communications 9 November Johlin S. Mann S.
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